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CWO - Cadmium Tungstate
Introduction
Cadmium Tungstate (CdWO4, CWO) single crystal is an important scintillation material applied in the radiation detection technology, especially for security checking, industrial CT and medical imaging. Large-size CWO single crystals with high quality are grown successfully by vertical Bridgman process in our company in recent years. CWO single crystal has a density as high as 7.9 g/cm3 without any deliquescence. Under high-energy rays radiation such as X-rays or γ-rays, the crystal exhibits the luminescence output with a central wavelength of 470 nm. The crystal possesses a series of scintillation properties such as a relative light yield 2~3 times of BGO crystal, a low afterglow only 10-2 grade relative to CsI (Tl) crystal and a γ-ray radiation hardness of 107 rad. Our company provides the mass products of CWO wafers and array elements, which can meet the technical requirements for radiation detection devices.
Tab. Materials properties of CWO single crystal
|
Crystal orientation |
[100], [010] |
|
Crystal structure |
Monoclinic system, Space group p2/c |
|
Crystal lattice |
a = 5.029 Å, b = 5.859 Å, c = 5.074 Å； α = γ = 90 °，β = 91.47 º |
|
Melting point |
1276 ℃ |
|
Density |
7.9 g/cm3 |
|
Thermal expansion coefficient |
6.39×10-6 /K ([100]), 1.09×10-5 /K ([010]) |
|
Refractive index |
2.3 |
|
Hardness |
4.5 Mohs |
|
Colour |
Nearly colorless to pale yellowish brown |
|
Deliquescence |
None |
|
Central wavelength of luminescence |
470 nm |
|
Relative light yield index |
20-30 (NaI (Tl) crystal with a light yield index 100 is used as reference) |
|
Absolute light yield |
2760 ± 50 p.e/MeV |
|
Energy resolution |
7.8-12% |
|
Luminescence decay time |
1.3 μs (36%, fast), 11.5 μs (64%, slow) |
|
Afterglow |
≦ 0.04% @3 ms |
|
γ-ray radiation hardness |
107 rad |
Figures：
Fig. 1 Ultroviolet-visible transmission spectra
Fig.2 X-ray stimulated luminescence spectra
Fig. 3 Energy spectrum and light yield of CWO wafer under γ-ray excitation
Fig. 4 Luminescence decay time of CWO wafer under UV excitation wafer under γ-ray excitation
Fig. 5 Afterglow of CWO crystal less than 0.04%@3ms under γ-ray excitation which only 10-2 grade relative to CsI(Tl) crystal
Fig.6 Relative light yield uniformity of crystal array elements
Products
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CWO - Cadmium Tungstate
- CdWO4 crystal is an important scintillation materials applied in the radiation detection technology, especially for security checking, industrial CT and medical imaging.
-
Introduction
Cadmium Tungstate (CdWO4, CWO) single crystal is an important scintillation material applied in the radiation detection technology, especially for security checking, industrial CT and medical imaging. Large-size CWO single crystals with high quality are grown successfully by vertical Bridgman process in our company in recent years. CWO single crystal has a density as high as 7.9 g/cm3 without any deliquescence. Under high-energy rays radiation such as X-rays or γ-rays, the crystal exhibits the luminescence output with a central wavelength of 470 nm. The crystal possesses a series of scintillation properties such as a relative light yield 2~3 times of BGO crystal, a low afterglow only 10-2 grade relative to CsI (Tl) crystal and a γ-ray radiation hardness of 107 rad. Our company provides the mass products of CWO wafers and array elements, which can meet the technical requirements for radiation detection devices.
Tab. Materials properties of CWO single crystal
|
Crystal orientation |
[100], [010] |
|
Crystal structure |
Monoclinic system, Space group p2/c |
|
Crystal lattice |
a = 5.029 Å, b = 5.859 Å, c = 5.074 Å； α = γ = 90 °，β = 91.47 º |
|
Melting point |
1276 ℃ |
|
Density |
7.9 g/cm3 |
|
Thermal expansion coefficient |
6.39×10-6 /K ([100]), 1.09×10-5 /K ([010]) |
|
Refractive index |
2.3 |
|
Hardness |
4.5 Mohs |
|
Colour |
Nearly colorless to pale yellowish brown |
|
Deliquescence |
None |
|
Central wavelength of luminescence |
470 nm |
|
Relative light yield index |
20-30 (NaI (Tl) crystal with a light yield index 100 is used as reference) |
|
Absolute light yield |
2760 ± 50 p.e/MeV |
|
Energy resolution |
7.8-12% |
|
Luminescence decay time |
1.3 μs (36%, fast), 11.5 μs (64%, slow) |
|
Afterglow |
≦ 0.04% @3 ms |
|
γ-ray radiation hardness |
107 rad |
Figures：
Fig. 1 Ultroviolet-visible transmission spectra
Fig.2 X-ray stimulated luminescence spectra
Fig. 3 Energy spectrum and light yield of CWO wafer under γ-ray excitation
Fig. 4 Luminescence decay time of CWO wafer under UV excitation wafer under γ-ray excitation
Fig. 5 Afterglow of CWO crystal less than 0.04%@3ms under γ-ray excitation which only 10-2 grade relative to CsI(Tl) crystal
Fig.6 Relative light yield uniformity of crystal array elements
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