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  • Nd:YLF

  • CASTECH grows Nd:YLF crystals using Czochralski method. The use of high quality starting materials for crystal growth, whole boule interferometry, and precise inspection of scattering particle in crystal using He-Ne laser assures that each crystal will perform well.
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Optical Properties

Transparency Range

180-6700nm

Peak Stimulated Emission Cross Section

1.8×10-19/cm2(E∥c) at 1047nm
1.2×10-19/cm2(E⊥c) at 1053nm

Spontaneous Fluorescence Lifetime

485 µs for 1% Nd doping

Scatter Losses

<0.2%/cm

Peak Absorption Coefficient(for 1.2% Nd)

α= 10.8cm-1 (792.0 nm E∥c)
α= 3.59cm-1 (797.0 nm E⊥c)

Laser Wavelength

1047nm (∥c,  a-cut crystal)
1053nm(⊥c,  a or c-cut crystal)

 

Physical Properties

Chemical Formula

LiY 1.0-x Nd x F4

Space Group

I41/a

Nd atoms/cm3          

1.40 X 1020 atoms/cm3 for 1% Nd doping   

Modulus of Elasticity

85 GPa

Crystal Structure

Tetragonal

Cell Parameters

a=5.16 Å , c=10.85 Å

Melting Point

819℃

Mohs Hardness

4~5

Density

3.99 g/cm3

Thermal Conductivity

0.063 W/cm/K

Specific Heat

0.79 J/g/K

Thermal Expansion Coefficients

8.3×10-6/k∥c
13.3×10-6/ k⊥c

 

Index of Refraction

  Wavelength(nm) 

no

ne

262

1.485

1.511

350

1.473

1.491

525

1.456

1.479

1050

1.448

1.470

2065

1.442

1.464

 

dn/dT

  Wavelength(nm) 

  E∥c 

E⊥c

436

    -2.44×10-6/℃   

    -0.54×10-6/℃   

578

-2.86×10-6/℃

-0.91×10-6/℃

1060

-4.30×10-6/℃

-2.00×10-6/℃

 

The Sellmeier equations(λ in μm):

no2=1.38757+0.70757λ2/(λ2-0.00931)+0.18849λ2/(λ2-50.99741)

ne2=1.31021+0.84903λ2/(λ2-0.00876)+0.53607λ2/(λ2-134.9566)

 

CASTECH’s general Nd:YLF production capabilities including:
       •    Rod  sizes from 2mm to 10mm in diameter and from 1mm to 150mm in length; 
       •    Orientation of rod axis to crystal axis within 1 degree;
       •    Polished only or AR coated rods;
       •    Nd dopant concentrations between 0.4 and 1.2at%;
       •    Large rod and slab dimensions and non-standard dopant concentrations are available upon request.

 

Specifications

Standard Dopant         

1.1 ± 0.1%

Wavefront Distortion

<λ/4 per inch @633nm

Parallelism

<10 ″

Perpendicularity

<5 ′

Chamfer

0.13± 0.07mm @45°

Surface Quality

10/5

End Coating

R<0.15%@1047/1053nm                 

Surface Flatness

λ/8 @632.8nm

 

 

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