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PPLN - Periodically Poled LN
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PPLN - Periodically Poled LN

The NLO crystal Lithium Niobate is made into a periodically inverted domain structure, called Periodically Poled Lithium Niobate (PPLN), to compensate for phase mismatch caused by dispersion.
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Introduction

Based on the quasi-phase matching theory (QPM), the nonlinear optical crystal  Lithium Niobate is made into a periodically inverted domain structure, called Periodically Poled Lithium Niobate (PPLN), to compensate for phase mismatch caused by dispersion, so that the effective nonlinear coefficient of the nonlinear optical crystal can be used to the greatest extent and the frequency conversion characteristics of the nonlinear crystal can be greatly improved.

  • Excellent grating uniformity
  • High conversion efficiency
  • Free of Walk-Off Competitive price

                                        

                             

 

The Structure Types of PPLN

    1. Classified by the internal domain structure :

                       

      * Users can custom appropriate PPLN domain structure as their requirements.

 

     2. Classified by the device structure :

                                                                              

                                        Bulk                                                Buried waveguide                                                         Slab waveguide

 

                                                                                  

                                Ridge waveguide                                   Integrated with laser crystal                          Optically contacted with laser crystal

    * Users can choose their desired PPLN structure according to the pumped laser power, conversion efficiency, output laser power and size, etc.

 

Keyword:
PPLN
Periodically Poled LN
compensate phase mismatch dispersion
NLO crystal
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The Specifications of PPLN
      Indicators       Parameters
      Type of conversion       SHG/DFG/SFG/OPO/OPA/OPG, etc.
      Grating types        Single/Multi/Chirp/Fan-out/Cascade, etc.
      QPM period        Standard and customized (4.0 um~200 um)
      Transparency range        330 nm~5500 nm
      Matching temperature        25℃~200℃
      Thickness        Up to 5 mm
      Length        Up to 55 mm
      Duty Ratio        48%~52% or customized
      Flatness        λ/6 @632.8 nm
      Parallelism        <10”
      Perpendicularity        <10’
      Surface Quality        10/5
      Coating Options        AR/HR

 

 

 

Production process

             

            LN substrates                                                    PPLN wafers                                                  PPLN chips   

 

 

 

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PPLN - Periodically Poled LN
PPLN - Periodically Poled LN
PPLN 4
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  • PPLN - Periodically Poled LN

  • The NLO crystal Lithium Niobate is made into a periodically inverted domain structure, called Periodically Poled Lithium Niobate (PPLN), to compensate for phase mismatch caused by dispersion.
Description
Cas'Tech Class
Parameters
Download

Introduction

Based on the quasi-phase matching theory (QPM), the nonlinear optical crystal  Lithium Niobate is made into a periodically inverted domain structure, called Periodically Poled Lithium Niobate (PPLN), to compensate for phase mismatch caused by dispersion, so that the effective nonlinear coefficient of the nonlinear optical crystal can be used to the greatest extent and the frequency conversion characteristics of the nonlinear crystal can be greatly improved.

  • Excellent grating uniformity
  • High conversion efficiency
  • Free of Walk-Off Competitive price

                                        

                             

 

The Structure Types of PPLN

    1. Classified by the internal domain structure :

                       

      * Users can custom appropriate PPLN domain structure as their requirements.

 

     2. Classified by the device structure :

                                                                              

                                        Bulk                                                Buried waveguide                                                         Slab waveguide

 

                                                                                  

                                Ridge waveguide                                   Integrated with laser crystal                          Optically contacted with laser crystal

    * Users can choose their desired PPLN structure according to the pumped laser power, conversion efficiency, output laser power and size, etc.

 

 

The Specifications of PPLN
      Indicators       Parameters
      Type of conversion       SHG/DFG/SFG/OPO/OPA/OPG, etc.
      Grating types        Single/Multi/Chirp/Fan-out/Cascade, etc.
      QPM period        Standard and customized (4.0 um~200 um)
      Transparency range        330 nm~5500 nm
      Matching temperature        25℃~200℃
      Thickness        Up to 5 mm
      Length        Up to 55 mm
      Duty Ratio        48%~52% or customized
      Flatness        λ/6 @632.8 nm
      Parallelism        <10”
      Perpendicularity        <10’
      Surface Quality        10/5
      Coating Options        AR/HR

 

 

 

Production process

             

            LN substrates                                                    PPLN wafers                                                  PPLN chips   

 

 

 

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