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Pockels Cells

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Pockels cells is a component that uses the Pockels effect by applying the voltage on electro-optic crystal to change the polarization of incident light. The Pockels effect, which includes the transverse and longitudinal Pockels effect. In the case of the transverse Pockels effect the direction of the light is perpendicular to the direction of electric field, but under the longitudinal Pockels effect, they are parallel to each other.

BBO Pockels cells is created by the transverse Pockels effect. The voltage could be reduced by changing the ratio of BBO's width to length. Due to the low piezoelectric response and high laser damage threshold of BBO, CASTECH's BBO Pockels cells supports the high frequency of 1MHz. Complete portfolio with various CA and length is on-shelf for your choice.

KD*P Pockels cells is created by both the transverse and longitudinal Pockels effect. CASTECH offers two different shapes of Pockels cells, which are the round (series DPC-R) and the cubic (series DPC-S). The electrode of DRC-R series can be terminated by the wires or insert pin. The Pockels cells integrated with pre-adjusted Brewster polarizer, wave plate or ceramic plate are also available.

All the Pockels cells are equipped with protective windows with high transmission AR coating to prevent the Pockels cells from any contamination and moisture so that guarantee the consistent high performance and long lifetime.

 

Applications:

● Q-switching

● Regenerative amplifier

● Pulse picker

● Cavity dumping

● High speed optical switch

● Beam chopper

● Optical power stabilizer

 

Iintroduction:

BBO

  UV VIS NIR IR
Center Wavelength 355nm or other 532nm or other 914,1030,1064nm or other 1342nm or other
Transmission(single pass) >98% >96%
Clear Aperture  2-7mm or other
Capacitance <8pF
Contrast ratio >1000:1
Damage Threshold ≤1 GW/cm², at 1064 nm, 10 ns, 10 Hz

 

DKDP

  UV VIS NIR IR
Center Wavelength 355nm or other 532nm or other 914,1030,1064nm or other 1342nm or other
Clear Aperture  2-15mm or other
Transmission(single pass) >98% >96%
Capacitance <8pF
Contrast ratio 1000:1
Damage Threshold ≤1 GW/cm², at 1064 nm, 10 ns, 10 Hz

 

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BBO

BPC-a l q-b-w
Aperture(a) Crystal Length (l) Crystal Quantity (q) Additional (b) Wavelength (w)
3(3mm)
4(4mm)
5(5mm)
6(6mm)
7(7mm)
...
A
(20mm)
B
(25mm)
S
(single)
D
(double)
C(Ceramic)
W(Wave plate)
B(Brewster window)
A(Brewster window  & wave plate)
N(Nothing)
1342nm
1064nm
1030nm
532nm
266nm
...
Fiber-coupled FC/PC
Bare fiber

 

 

  3AS 3BS 4AS 4BS 5AS 5BS 6AS 6BS 3AD 3BD 4AD 4BD 5AD 5BD 6AD 6BD
A 2.6 2.6 3.6 3.6 4.6 4.6 5.6 5.6 2.6 2.6 3.6 3.6 4.6 4.6 5.6 5.6
B 35 40 35 40 35 40 35 40 57.7 67.7 57.7 67.7 57.7 67.7 57.7 67.7
C 17.5 20 17.5 20 17.5 20 17.5 20 17.4 23 17.4 23 17.4 23 17.4 23
λ/4 voltage(@ 1064 nm), kV 3.5 2.8 4.9 3.9 5.9 4.7 7.3 5.8 1.8 1.4 2.5 2 3 2.4 3.7 2.9

DKDP

DPC - t  a  q - c - b - w
Type (t) Aperture(a) Crystal Quantity (q) Connection (c) Additional (b) Wavelength (w)
R
(Circular)
≤15mm S
(single)
D
(double)
P
(Pin)
W
(Wire)
C(Ceramic)
W(Wave plate)
B(Brewster window)
A(Brewster window  & wave plate)
N(Nothing)
1064nm
1030nm
532nm
405nm
355nm
...
S
(Square)
≤12mm
T
(Transverse)
≤10mm D
(double)
Q
(quattuor)
B
(BNC)

 

 

  R8S R10S R12S R15S
A 8 10 12 15
B 28 39 44 44
C 19 25.4 25.4 30
D 10 12 15 15
 λ/4 voltage(@ 1064 nm), kV 3.5 3.5 3.5 3.5

 

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