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Ti:Sapphire - Titanium Doped Sapphire

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Ti:Sapphire - Titanium Doped Sapphire
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  • Ti:Sapphire - Titanium Doped Sapphire

  • Ti:Sapphire is the most widely used laser crystal for tunable and ultrashort pulsed lasers with high gain and power outputs. CASTECH supplies large-sized Ti:Sapphire wiht high quality.
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Introduction

Titanium Doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for widely tunable and ultrashort pulsed lasers with high gain and power outputs. CASTECH possesses the advanced growth method of Temperature Gradient Technique (TGT), and it supplies large-sized (Dia.30×30 mm3) Ti:Sapphire crystal in high quality free of light scatter, with the dislocation density less than 102 cm-2. The TGT grown sapphire crystal is characterized by the (0001) oriented growth, high doping level (α490 = 4.0 cm-1), high gain and laser damage threshold.

 

Main Applications

  • The tunable wavelengths that cover a broad range from 700 to 1000 nm make Ti:Sapphire  an excellent substitute for dye lasers in many applications;
  • Doubling by NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV (up to 193 nm ) laser with ultrafast pulses below 10fs;
  • Ti:Sapphire is also widely used as the pump source of  OPOs to expand the tunable range.

 

Table 1. Basic Properties

Chemical Formula

Ti3+: Al2O3

Crystal Structure

Hexagonal

Lattice Parameter

a = 4.758 Å, c = 12.991 Å

Density

3.98 g/cm3

Melting Point

2040 ℃

Mohs Hardness

9

Thermal Conductivity

52 W/m/k

Specific Heat

0.42 J/g/K

Laser Action

4-level Vibronic

Fluorescence Lifetime

3.2 μs (T = 300K)

Tuning Range

660-1050 nm 

Absorption Range

400-600 nm

Emission Peak

795 nm

Absorption Peak

488 nm

Refractive Index

1.76 @800 nm 

Peak Cross-section

3~4 × 10-19 cm2

Thermal Expansion

8.40 × 10-6  /℃

 

Specifications of Ti:Sapphire crystal from CASTECH

Table 2. Specifications

Orientation

Optical axis C normal to rod axis

Ti2O3 concentration

0.06-0.26 at.%

Figure Of Merit (FOM)

100~250 (>250 available upon special requests)

α490

1.0-4.0 cm-1

Diameter

2~30 mm or specified

Path Length

2~30 mm or specified

End Configurations

Flat/Flat or Brewster/Brewster ends

Surface Quality (Scratch / Dig)

40/20 to MIL-PRF-13830B

Flatness

≦ λ/8 @633nm

Wavefront Distortion

≦ λ/4 @633 nm

Parallelism

20 arc sec

Perpendicularity

≦ 15 arc min

 

Note

AR-Coating is available upon request.

  • Laser Crystals_Titanium Doped Sapphire Crystal (Ti_Sapphire).pdf

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