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Yb:CaGdAlO4
CASTECH’s Yb:CaGdAlO4 is featured by
• High absorption coefficient @ 979 nm
• High stimulated emission cross section
• Low laser threshold
• Extremely low quantum defect
• Broad output at 994-1050 nm
• High slope efficiency with diode pumping (up to 55%)
• Various Yb-doping concentration
Applications
• Over 5.5W output power is obtained by 23W incident pumping diode laser with 10% output coupler.
• Output power as high as 12.5W and 94fs pulses for 28W pumping power was reported.
Basic Properties:
|
Crystal structure |
Tetragonal |
|
Point group |
I4/mmm |
|
Cell Parameters |
a = 3.6585Å; c = 1.1978 Å |
|
Mohs hardness |
6 |
|
Density, g/cm³ |
4.8 |
|
Melting Point(C°) |
1850 |
|
Thermal conductivity (W/m/K) |
K[001] =6.3 K[001] =6.9 |
|
Thermal expansion coefficient (10-6 /K) |
10.1(//a); 16.2(//c) |
|
Lasing Wavelength |
994-1050nm |
|
Absorption Wavelength |
979nm |
|
Absorption Cross Section (phi configuration at 979nm) |
2.7x(10-20)cm² |
Specifications of Yb:CaGdAlO4：
|
Orientation |
a or c |
|
Standard Dopant concentration (at. %) |
1%, 2%, 3%, 5% |
|
Maximum length |
50mm |
|
Length tolerance, mm |
+0.5 / -0.2 |
|
Diameter tolerance, mm |
+/-0.1 |
|
Parallelism |
< 30” |
|
Perpendicularity |
< 15’ |
|
Surface quality |
10/5 |
|
Coating |
AR-coated |
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